报告人： 买买提•热夏提 （副教授，日本东京理工大学博士）
报告题目：绝缘膜的届面特性及厚度细化的研究
地点： 物理楼313
时间： 2012年9月12日 17:30
报告摘要：摘要：Performance improvement in MOSFETs with high-κ gate stack is regarded as one of the most important research topics in the advanced CMOS technology. In this study, interfacial properties in La2O3 gate stack, the one of the promising high-κ candidate, were studied. The effect of remote Coulomb scattering (RCS) on electron mobility in La2O3 gated MOSFETs were also studied. A novel interpretation for conductance spectra has been proposed, and two distinct conductance peaks observed for La2O3 gate stack with scaled equivalent oxide thickness (EOT) were assigned as interface traps at La-silicate/Si-substrate interface and slow traps at La2O3/La-silicate interface, respectively. Moreover, obtained results show that RCS from Coulomb charges located near the metal gate/high-κ interface become an important factor in mobility degradation of La2O3 gated MOSFETs with scaling of EOT.
欢迎各位老师届时参加，要求材料方向的老师必须参加。
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